Because conventional nonvolatile memory is limited by process technology and physical size, resistive random access memory rram gradually enters the field of view due to its simple structure, fast programerase speed, low power consumption, and so on. As a consequence, various memory devices such as static random access memory, resistive random access memory rram. Jul, 2016 resistive random access memory that avoids an initial forming process improves fabrication methods and reliability. An indiumfree transparent resistive switching random. The results substantiate decrease in saturated temperature with increase in the radius and resistivity of filament for the investigated rram devices. Tunnel barrier engineering of titanium oxide for high nonlinearity of selectorless resistive random access memory sangheon lee, jiyong woo, daeseok lee, euijun cha, jaesung park, kibong moon, jeonghwan song, yunmo koo, and hyunsang hwanga department of materials science and engineering, pohang university of science and technology.
Collectively, our results show that monitoring the oxygen movement by raman spectroscopy for a resistive random access memory rram is made possible by inserting a singlelayer graphene at electrodeoxide interface. Related content resistive switching characteristic and uniformity of lowpower hfo xbased resistive random access memory with the bn insertion. The memory device shows good transmittance in the visible region and bipolar resistive switching behavior with good. This work focuses on a subset of resistive memories, called metaloxide reram. Direct observations of nanofilament evolution in switching processes in hfo 2.
Threedimensional 3d vertical resistive randomaccess. Tsai2 1department of electrical engineering and graduate institute of electronics engineering, national taiwan university, taiwan. Pdf 20430 kb pdf plus 4073 kb home series home abstract. The achieved characteristics of resistive switching of tio 2 thin. Structure and functionality correlation in resistive random. Transparent and flexible resistive switching memory. This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin oxideznoito capacitor structure. Thermally stable transparent resistive random access memory.
A solutionprocessed method is developed to fabricate fully transparent resistive random access memory rram devices with a configuration of ftozro2ito, where the zirconium dioxide zro2 layer was firstly deposited on fluorine tin oxide fto substrate by solgel and then indium tin oxide ito films were deposited on zro2 layer by solgel as the top electrodes. The emerging nvm candidates are spintransfertorque magnetoresistive random access memory sttmram 2, phase change random access memory pcram 3, and resistive random access memory rram 4. Materials selection for oxidebased resistive random access. This technology bears some similarities to conductivebridging ram cbram, and phasechange memory pcm. Series synthesis digital library of engineering and computer science. The memory device demonstrates not only good optical transmittance but also a formingfree bipolar resistive switching behavior with roomtemperature r off r on ratio of 45, excellent endurance of. Jan 11, 2017 resistive random access memory rramreram is a new type of memory designed to be nonvolatile. Therefore, intensive studies have been carried out in seeking for the nextgeneration memories. A reading of patent 6946702 suggests phasechange memory and the resistance random access memory described in the patent use a fundamentally different memory storage element. A transparent resistive random access memory trram based on itogd 2 o 3 ito capacitor structure is successfully fabricated on glass substrate by pulse laser deposition pld at room temperature. Bipolar resistive switching properties in transparent.
Materials selection for oxidebased resistive random access memories yuzheng guo and john robertson engineering dept, cambridge university, cambridge cb2 1pz, uk. Investigating the temperature effects on resistive random access. The role of the inserted layer in resistive random access. Request pdf transparent flexible resistive random access memory fabricated at room temperature we report the room temperature fabrication of highly. The most popular devicelevel component chosen to implement the synapses is the memory. Highperformance and selfrectifying resistive random. Mass production of nanogap electrodes toward robust. Abstract the energies of atomic processes in resistive random access memories rram are calculated for four typical oxides, hfo2, tio2, ta2o5 and al2o3, to define a materials selection. New research into resistive randomaccess memory rram using. The recent progress of research on resistive random access memory. Characterisation of novel resistive switching memory devices.
We report a transparent and flexible resistive random access memory reram using a multithinlayer electrode. Particularly, memory devices indispensable for any kind of electronic systems draw most of attentions. According to the previous work, the issues could be removed by employing resistive random access memory rram that works on a resistancebased mechanism. The reported device exhibits formingfree bipolar resistive switching behavior at room temperature with good memory performance 20. Abstract a znobased transparent resistance random access memory trram employs atomic layered graphene exhibiting not only excellent. An alloxide transparent resistive random access memory trram device based on hafnium oxide hfo x storage layer and indiumtin oxide ito electrodes is fabricated in this work. For rram, material with switchable resistance, working as the storage medium, is the most important part for the performance of the memory. Jun 24, 2017 emerging nonvolatile memory technologies are promising due to their anticipated capacity benefits, nonvolatility, and zero idle energy. The asdeposited vo thin films were deposited onto transparent indium tin oxide ito substrate for the possible application in the structure of system on panel sop devices. Resistive random access memory enabled by carbon nanotube. It is under development by a number of companies, and some have already patented their own versions of the technology. Resistive randomaccess memory reram or rram is a type of nonvolatile nv random access ram computer memory that works by changing the resistance across a dielectric solidstate material, often referred to as a memristor.
According to the invention, the resistive material is a large energy gap semiconductor. Resistive random access memory, known as reram or rram, is a type of nonvolatile memory that stores information by changing the cell resistances. A fully transparent resistive memory trram based on hafnium oxide hfo2 with excellent transparency, resistive switching capability, and environmental stability is demonstrated. Wang et al reported the thermoelectric seebeck effect in oxidebased resistive switching memory. In addition, the inserted slg enables the reduction of reset current by 22 times and programming power consumption by 47 times.
Oxygendoped zirconium nitride based transparent resistive random access memory devices fabricated by radio frequency sputtering method. Resistive random access memory rram has become one of the most promising candidates for the nextgeneration memory 314 because of the intrinsic excellent scalability. All layers, including an active layer and top and bottom ito electrodes, were deposited on a glass substrate by either spin. Transparent and flexible resistive random access memory. Pdf resistive switching modification by ultraviolet. In this thesis, the resistive switching characteristics in ptero x tin device. The resistive random access memory rram is considered to be a strong. Publication san rafael, california 1537 fourth street, san rafael, ca 94901 usa.
Resistive random access memory rram synthesis lectures on emerging engineering technologies. Fram is the first among advanced nonvolatile memories, such as magnetoresistive random access memory mram, phasechange random access memory pram and resistive random access memory reram, to be commercialized. Resistive random access memory rram is considered as one of most. Aside from the fear of invisible androids, a recent paper at applied physics letters on the possibility of transparent resistive memory, or trram, adds another item to the infinite task list of what can we do with this.
The invention discloses a full transparent resistive random access memory and application of barium stannate on the aspect of using the barium stannate as a transparent material with the stable resistance changing characteristic and belongs to the technical field of a semiconductor nonvolatile memory. Among various nextgeneration nvms, resistive random access memory rram is a promising candidate for future memory due to its highefficiency, highspeed and energysaving characteristics. Rram devices are able to switch between two resistance states, making it useful for data storage. The conduction mechanism of the resistive switching of our device was explained by ohmic conduction and a poolefrenkel emission model. Transparent memory for harsh electronics scientific reports. Conductance quantization in resistive random access memory. Tio2 thin film based transparent flexible resistive. Abstractwe report an indiumfree transparent resistive switching random access memory device based on gzoga 2o 3znoga 2o 3gzo structure by metalorganic chemical vapor deposition.
This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin. This result means that the transparent memory by controlling the working pressure during sputtering process to deposit. Rram device based on hafnium oxide hfox storage layer and indium. Therefore, the development of nextgeneration nvm is urgent as widely applied flash memory is facing its physical limit. This is strictly the same technology as phasechange memory. All nonmetal resistive random access memory scientific. Study of resistive switching behavior in ero thin film for. We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ito indium tin oxidezno zinc oxideitoagito capacitor. Comparing with the traditional floating gate flash memory, rram has advantages in cell structure, operation speed, scalability and ease of 3d integration.
All itobased transparent resistive switching random. Shih and others published resistive switching modification by ultraviolet illumination in transparent electrode resistive random access memory find, read and cite all. Mass production of nanogap electrodes toward robust resistive random access memory ajuan cui beijing national laboratory for molecular sciences, key laboratory of organic solids, institute of chemistry, chinese academy of sciences, beijing, 100190 p. Specific rram content should be merged into the phasechange memory page. The proposed device exhibits transparent property and. Itoalnito capacitors and its observed resistive switching char acteristics. Experimentally, the 119oriented cbti144 thin films were deposited onto the itoglass substrates by rf magnetron sputtering followed by rapid thermal annealing rta at a temperature. Traditional resistive random access memory rram is a metalinsulatormetal mim structure, in which metal oxide is usually used as an insulator. Transparent flexible resistive random access memory fabricated at. The memory operates by changing the resistance of special dielectric material called a memresistor memory resistor whose.
Resistive random access memory cells have a capacitor like structure composed of insulation or semiconductor materials that are sandwiched between two highly conductive electrodes as shown in figure1. Resistive random access memory reram technology has been viewed as one of the most reliable nonvolatile memories that have are emerging in markets. Transparent resistive switching memory using aluminum. Introduction lorem ipsum dolor sit amet, consectetur adipiscing elit. Resistive switching behavior and optical properties of transparent pr. To develop highdensity memory arrays, a selfrectifying resistive random access memory based on a cusno 2 nanorod array. The fabricated trram has a transmittance of 81% including the substrate in the visible region and an excellent switching behavior under 3 v. Transparent flexible resistive random access memory. Stable endurance with an onoff ratio of more than one order of magnitude during 5000 cycles confirmed that the codoped zno device is a suitable candidate for resistive random access memory application. Zno nanoparticle npfluorinedoped tin oxide fto structure is proposed to avoid the sneak current. Sep 23, 20 a research team from the national university of singapore has shown how nanostructures in amorphous titanium dioxide could be used for the next generation of electronic device memory. A resistive random access memory rram includes a top electrode te, a bottom electrode be, and a transition metal oxide tmo layer between the top and the bottom electrodes. Resistive random access memory rram synthesis lectures on emerging engineering technologies yu, shimeng on. Monitoring oxygen movement by raman spectroscopy of.
Increasing dependence of the functionality and performance of computing system on the characteristics of the memory subsystem calls for further study on various memory. Resistive random access memory reram or rram is a type of nonvolatile nv random access ram computer memory that works by changing the resistance across a dielectric solidstate material, often referred to as a memristor. A fully transparent resistive memory for harsh environments pokang yang 1. We fabricated allsolution processed, fully transparent resistive random access memory soltrram with a configuration of itogaznogzoito. The rram further includes a metal cap layer above the top electrode and a transparent metal oxide tco layer between the metal cap layer and the top electrode. A fully transparent resistive memory for harsh environments. Rram devices typically consist of a metaloxide sandwiched between two metal electrodes.
Solution processed resistive random access memory devices. A graphene integrated highly transparent resistive. Photosensitivity to ultraviolet uv light for zinc oxide zno resistance random access memory rram with transparent electrode was investigated and characterized in this paper. An overview of resistive random access memory devices. Resistive random access memory rram is a form of memory. Reram based on a new material, such as metal oxide and organic compound. Tunnel barrier engineering of titanium oxide for high non.
We report the room temperature fabrication of highly transparent and flexible resistive random access memory devices based on an ito indium tin oxidezno zinc oxideitoagito capacitor structure on a polyethersulfone flexible substrate. Resistive random access memory rram synthesis lectures. Oxygendoped zirconium nitride based transparent resistive. Pdf with scaling, existing chargebased memory technologies exhibit limitations due to charge leaking away easily in a smaller device. Cn102709472a fulltransparent resistive random access. Resistive random access memory reram advanced composite.
One of the most promising candidates is resistive random access memory rram based on resistive switching rs. The intrinsic scalingdown ability, simple metalinsulatormetal mim sandwich structure, excellent performances, and complementary metaloxidesemiconductor cmos technologycompatible fabrication processes make resistive random access memory rram one of the most promising candidates for the nextgeneration memory. Bended states radius 10 mm of the device also did not affect the memory performance because of the flexibility of the two transparent izo electrodes and the thin al 2 o 3 layer. Recently, binary oxide material resistive random access memory rram devices have been widely discussed and observed for applications in.
As a new class of nonvolatile memory, resistive random access memory rram offers not only superior electronic characteristics, but also. The resistive switching properties were affected severely through oxygen manipulation by uv light irradiation. Thermally stable transparent resistive random access. We demonstrate the hybrid fabrication process of a graphene integrated highly transparent resistive random access memory trram device. Transparent and flexible resistive random access memory based. Graphene and related materials for resistive random access memories fei hui, enric grustangutierrez, shibing long, qi liu, anna k. The bipolar switching and electrical conduction properties in transparent vanadium oxide vo resistance random access memory device were investigated in. Energetic behavior of resistive randomaccess memory cells. At present, flash memory is the nvm most adopted in electronic products whereas socalled next generation memory technologies, e. A parameterized spice macromodel of resistive random access memory and circuit demonstration huanlin chang1, hsuanchih li1, c. Transparent resistive random access memory trram based. A parameterized spice macromodel of resistive random. Nonvolatile memory resistive random access memory rram uclb. Graphene and related materials for resistive random access.
Several emerging nonvolatile memory nvm technologies have been pursued toward to achieving part of these ideal characteristics. Research progresses of resistive random access memory. An overview of materials issues in resistive random access memory. The itoagito multilayered bottom electrode provides superior flexibility as well as high transparency compared to devices with ito single bottom. This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin oxideznoito capacitor structure and its resistive switching. The resistive random access memories rrams is a major candidate for the nextgeneration nonvolatile memory due to its advantages of low power consumption, and highbit desity, high speed, high endurance and nondestructive read. The role of the inserted layer in resistive random access memory device to cite this article. Although most of the transition metal oxides have been. This lecture is a comprehensive tutorial of metal oxidebased rram technology from device fabrication to array architecture design. Resistive random access memory rram has shown great potential as a leading candidate for nextgeneration nonvolatile memory technology. The memory device demonstrates not only good optical transmittance but also a forming. Resistive random access memory rram is a very promising next generation nonvolatile ram, with quite signi. Request pdf transparent resistive random access memory and its characteristics for nonvolatile resistive switching this report covers the fabrication of a fully. Among various nextgeneration nvms, resistive random access memory rram is a promising candidate for future memory due to its highefficiency, highspeed and.
Nonvolatile memory resistive random access memory rram. All solutionprocessed, fully transparent resistive memory devices. The resistive random access memory rram is considered to be a strong candidate which is. Zizhen jiang analysis on resistive random access memory rram. Based resistive random access memory by in situ tem studies chao li. Resistive randomaccess memory that avoids an initial forming. Bipolar resistive switching properties in transparent vanadium oxide. Direct observations of nanofilament evolution in switching. Resistive random access memory memristor for later. We resort to the thermal reaction model of rram for the present analysis. The indium tin oxide itoal 2 o 3 graphene nonvolatile memory device possesses a high transmittance of 82% in the visible region 370700 nm and exhibits stable and nonsymmetrical bipolar switching characteristics with considerably low set and reset. The transparent and flexible reram includes a multithinlayer electrode that is transparent and flexible and an al 2 o 3 layer as a transparent oxide material.
We report on the magnetic field control of a bipolar resistive switching in agtio 2 fto based resistive random access memory device through. Express 3 076301 view the article online for updates and enhancements. The electrical conduction and bipolar switching properties of resistive random access memory rram cells with transparent calcium bismuth titanate cabi 4 ti 4 o 15 cbti144 thin films were investigated. Resistive random access memory rram has attracted comprehensive attention from academia and industry as a newtype of nonvolatile memory. Energetic behavior of resistive random access memory cells christopher m. A volatile memory loses stored data when power is removed, which is the case for dynamic random access memory dram and static random access memory sram. Additionally, fully transparent devices with a high transmittance of up to 90% at wavelength of 550 nm have been fabricated. Investigating the temperature effects on resistive random. This memory has many advantages, such as highspeed, low power consumption, simple structure, highdensity integration, etc. Complementary resistive switching in tantalum oxidebased. When the multithinlayer electrode is used for the top and bottom electrode for the reram, the reram has. Resistive random access memory rram is a very promising next generation nonvolatile ram, with quite significant advantages over the widely used siliconbased flash memories. Reram, also called rram resistive random access memory, is considered to be a type of memristor technology a passive twoterminal electronic device that is designed to express only the property of an electronic component that lets it recall the last resistance it had before being shut off memristance.
To clarify the switching mechanism, conduction current fitting was applied and meanwhile a. Resistive random access memory rram is widely considered as a disruptive technology that will revolutionize not only nonvolatile data storage, but also potentially digital logic and neuromorphic computing. Impacts of co doping on zno transparent switching memory. In this research paper, the revolution of reram will be analyzed. Resistive random access memory rram synthesis lectures on. This report covers the fabrication of a fully transparent resistive random access memory trram device based on an ito indium tin oxideznoito capacitor structure and its resistive switching characteristics.
Magneto resistive ram market is likely to expand at a cagr of 43. Rram technology has made significant progress in the past decade as a competitive candidate for the next generation nonvolatile memory nvm. Bipolar switching characteristics of rram cells with. Resistive random access memory reram based on metal oxides. All solutionprocessed, fully transparent resistive memory. These rram devices can be constructed using metalinsulatormetal mim structure, which provides fully transparency that is achieved in both a widebandgap active material and a wide. Beijing national laboratory of condensed matter physics, institute of physics, chinese academy of sciences, beijing, 100190 p. The team found that titanium dioxide can be altered to create pioneering memory cells using resistive randomaccess memory rram, or reram. Remote control of resistive switching in tio 2 based.
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